ST M28F101 -120K1 1Mb 128K x 8/ Chip Erase FLASH MEMORY
1 Megabit (128K x 8, Chip Erase) FLASH MEMORY
FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE INTEGRATED ERASE/PROGRAM-STOP TIMER OTP COMPATIBLE PACKAGES and PINOUTS EXTENDED TEMPERATURE RANGES